Radiative lifetime measurements of SiH(A 2Δ) by laser-induced fluorescence
Abstract
Ground-state SiH radicals have been produced by a microwave discharge in SiH 4 and excited into their (A 2 Δ. υ' = 0) state by a pulsed dye laser. The radiative lifetime of this state, which has been determined by fluorescence decay, is τ 0 = 534 ± 23 ns corresponding to an oscillator strength of f00 = (4.8 ± 0.2) × 10 -3.
- Publication:
-
Chemical Physics Letters
- Pub Date:
- July 1984
- DOI:
- 10.1016/0009-2614(84)85054-X
- Bibcode:
- 1984CPL...108..560B