Resonant Fowler-Nordheim tunneling in n - GaAs-undoped AlxGa1 - xAs-n + GaAs capacitors
Abstract
Periodic structure is observed in the current-voltage characteristics at 4.2 K of n-GaAs-AlxGa1-xAs-n+GaAs capacitors, grown by molecular beam epitaxy, which have AlxGa1-xAs thicknesses of 30-35 nm. The periodicities can be explained quantitatively by the theory of resonant Fowler-Nordheim tunneling.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 1984
- DOI:
- 10.1063/1.94564
- Bibcode:
- 1984ApPhL..44...90H
- Keywords:
-
- Aluminum Gallium Arsenides;
- Capacitors;
- Electron Tunneling;
- N-N Junctions;
- Sis (Semiconductors);
- Volt-Ampere Characteristics;
- Capacitance;
- Energy Bands;
- Resonance;
- Solid-State Physics