Determination of the entropy-factor of the gold donor level in silicon by resistivity and DLTS measurements
Abstract
The parameters of the gold donor level inp-type silicon are determined from the temperature dependence of the free carrier concentration and from DLTS measurements. The entropy-factorXTis determined to be 20±2. In addition, the capture cross-section for holes σp=5.5×10-15 cm2 and the reaction enthalpyHT-Hv=0.35eV for the exchange of holes between the gold donor level and the valence band are obtained in the present investigation.
- Publication:
-
Applied Physics A: Materials Science & Processing
- Pub Date:
- May 1984
- DOI:
- 10.1007/BF00617573
- Bibcode:
- 1984ApPhA..34...41K
- Keywords:
-
- Donor Materials;
- Enthalpy;
- Gold;
- Semiconductors (Materials);
- Silicon;
- Spectroscopy;
- Temperature Dependence;
- Absorption Cross Sections;
- Capacitance;
- Doped Crystals;
- Electrical Resistivity;
- Entropy;
- Holes (Electron Deficiencies);
- Schottky Diodes;
- Solid-State Physics;
- PACS 71.20;
- 71.20