On basic results of the joint Soviet-Vietnamese programme "HALONG" on space semiconductor technology
Abstract
The Bi 1(Te,Se) 3 and GaP crystals were obtained according to the joint Soviet-Vietnamese programme "HALONG" on semiconductor material science on board the "SALYUT-6" orbital station during the U.S.S.R.-S.R.V. international space flight. The comparative investigations of these crystals and their Earth-grown analogs were carried out in order to reveal peculiarities of the heat and mass transfer process during crystallization under microgravity. The special attention was paid to the studying of growth morphology, bubble formation, impurity and composition distribution in these crystals. The strong influence of the crystallization conditions on the impurity segregation mechanism and structural perfection of these materials were exhibited. It was also found that electrical-physical parameters are correlated with the crystalline structure and the composition distribution of crystals.
- Publication:
-
Acta Astronautica
- Pub Date:
- April 1984
- DOI:
- 10.1016/0094-5765(84)90103-6
- Bibcode:
- 1984AcAau..11..155R
- Keywords:
-
- Crystal Growth;
- Low Gravity Manufacturing;
- Semiconductors (Materials);
- Space Manufacturing;
- Bismuth Compounds;
- Bismuth Tellurides;
- Bubbles;
- Gallium Phosphides;
- Liquid Phases;
- Microstructure;
- Space Commercialization;
- U.S.S.R. Space Program;
- Vietnam;
- Solid-State Physics