30/20 GHz spacecraft GaAs FET solid state transmitter for trunking and customer-premise-service application
Abstract
Sixteen 30 dB 0.5 W amplifier modules were combined to satisfy the requirement for a graceful degradation. If one module fails, the output power drops by only 0.43 dB. Also, by incorporating all the gain stages within the combiner the overall combining efficiency is maximized. A 16 way waveguide divider combiner was developed to minimize the insertion loss associated with such a large corporate feed structure. Tests showed that the 16 way insertion loss was less than 0.5 dB. To minimize loss, a direct transition from waveguide to microstrip, using a finline on duroid substrate, was developed. The FETs fabricated on MBE grown material, demonstrated superior performances. For example, a 600 micrometer device was capable of 320 mW output power with 5 dB gain and 26.6% efficiency at 21 GHz. The 16 module amplifier gave 8.95 W saturated output power with 30 dB gain. The overall efficiency was 9%. The 3 dB bandwidth was 2.5 GHz. At 17.7 GHz the amplifier had 5 W output power and at 20.2 GHz it still had 4.4 W.
- Publication:
-
Final Technical Report
- Pub Date:
- October 1983
- Bibcode:
- 1983ti...rept.....S
- Keywords:
-
- Electronic Modules;
- Field Effect Transistors;
- Gallium Arsenides;
- Power Amplifiers;
- Spacecraft Electronic Equipment;
- Transmitters;
- Block Diagrams;
- Insertion Loss;
- Microstrip Devices;
- Molecular Beam Epitaxy;
- Substrates;
- Waveguides;
- Electronics and Electrical Engineering