Radiation-hardened bulk CMOS technology for space and weapon systems
Abstract
The CMOS technology that furnishes significant power, performance, and severe environment operation advantages for space and weapon systems is nevertheless vulnerable to a variety of radiation-induced problems; these include functional failure, latch-up, and single-event logic and memory upsets. Attention is presently given to the development of radiation-hardened 4- and 2-micron feature size bulk-CMOS technologies which can overcome these irradiation problems in LSI and VLSI chips. Both a CMOS microprocessor family and a 16-K CMOS static RAM are presented as representative cases of this technology.
- Publication:
-
NTC 1983; Proceedings of the National Telesystems Conference
- Pub Date:
- 1983
- Bibcode:
- 1983ntc..conf...68A
- Keywords:
-
- Circuit Reliability;
- Cmos;
- Integrated Circuits;
- Radiation Hardening;
- Spacecraft Electronic Equipment;
- Technology Assessment;
- Chips (Electronics);
- Chips (Memory Devices);
- Microelectronics;
- Microprocessors;
- Weapon Systems;
- Electronics and Electrical Engineering