High power S-band transistors for telemetry

Design features of two new high-power solid-state Si bipolar telemetry transmitter transistors are described. The devices function in the 1.7-1.8 GHz and 2.0-2.3 GHz bands. Common features include internal matching circuits formed with direct return shunt inductors and self-aligned interdigitated transistor cells. The low-frequency transmitter can provide 50 W CW output at 28 V in the L-band mode and the high frequency device emits 25 W output at 20 V in the S-band mode.