Development and application of SIMS (Secondary Ion Mass Spectrometry) characterization techniques for the study of impurities and impurity motion in HgCdTe and CdTe
Abstract
The broad objectives of this program are to develop quantitative analytical procedures for the application of high performance Secondary Ion Mass Spectrometry (SIMS) to the analysis of CdTe and (HgCd)Te for trace element and major constituent characterization, particularly Hg, and to perform materials- directed research in order to better understand the incorporation and redistribution of impurity elements in CdTe and (HgCd)Te.
- Publication:
-
Semiannual Technical Report
- Pub Date:
- May 1983
- Bibcode:
- 1983eca..rept.....E
- Keywords:
-
- Cadmium Tellurides;
- Impurities;
- Ion Currents;
- Ion Irradiation;
- Mass Spectroscopy;
- Mercury Cadmium Tellurides;
- Charge Carriers;
- Current Density;
- Energy Spectra;
- Kinetic Energy;
- Quantitative Analysis;
- Atomic and Molecular Physics