Semiconductors investigated by time resolved raman absorption and photoluminescence spectroscopy using femtosecond and picosecond laser techniques

This report summarizes the research progress achieved in the period 1979-1982 in the research effort supported by AFOSR 80-0079. Two main areas of research are: picosecond and subpicosecond laser development and application and time-resolved studies of semiconductors. In the subpicosecond laser development program we investigated a variety of cavities of different physical parameters. A stable and reliable oscillator, which produces 200 fsec pulses, has been developed using a ring configuration. The first generation amplifier system has been completed with a gain of 10 to the sixth power. We have produce continuum by focusing the amplified pulses in a CC14 cell; and have invented a femtosecond luminescence technique (called population mixing) for probing semiconductor processes.