Development of technologies for highly integrated circuits

Adding of 3% HCl to O2 as atmosphere for oxidation and standby in the gate oxidation step of n-channel metal oxide semiconductors (NMOS) is discussed. A compatible double layer polysilicon technology for nonvolatile memories was developed. Programming with hot electrons, erasing by Fowler-Nordheim tunneling, single programming voltage of + 29V, number of programming cycles 10 000, charge retention time 10 years, and integration of random logic constituted the main features. For transfer of small patterns a reactive ion etching process for SiO2 with Shipley AZ 1470 was developed. A two step process results in acceptable selectivity and resolution of two microns using projection printing. Improvement of poly-mono-insulation is achieved.