Si:Bi switched photoconducttor infrared detector array
Abstract
A multiplexed infrared detector array is described. The small demonstration prototype consisted of two cryogenically cooled, bismuth doped silicon, extrinsic photoconductor pixels multiplexed onto a single output channel using an on focal plane switch integration sampling technique. Noise levels of the order of 400 to 600 rms electrons per sample were demonstrated for this chip and wire hybrid version.
- Publication:
-
Final Technical Report Aerojet Electrosystems Co
- Pub Date:
- January 1983
- Bibcode:
- 1983aec..rept.....E
- Keywords:
-
- Arrays;
- Bismuth;
- Infrared Detectors;
- Multiplexing;
- Photoconductors;
- Silicon;
- Cryogenic Cooling;
- Electronic Packaging;
- Focal Plane Devices;
- Noise Intensity;
- Instrumentation and Photography