In2O3 heterojunction photocells using compounds of type A(II)B(IV)C2(V)

The present study examines the photoelectric properties of n-p heterojunction solar cells consisting of a wide-gap (Eg = 3.6 eV, T = 300 K) In2O3 layer combined with crystals of ternary compounds of the form Group II B-IV A-V A (e.g., CdSnAs2, ZnSnP2, and ZnGeP2). The photosensitivity of such structures is investigated both in unpolarized light and linearly polarized light. It is demonstrated that such heterojunction cells can be used as wide-gap photosensitive structures at photon energies exceeding 0.3 eV and that these structures have polarimetric properties. It is concluded that In2O3 layers can be employed to design matrix converters of linearly polarized light using anisotropic semiconductors.