Structural and electronic aspects of degradation phenomena in metal-oxide-semiconductor systems
Abstract
It is shown that the degradation of the Nb-Nb2O5-MnO2 MOS system under the effect of electric and temperature fields is a two-stage process. The first stage is dominated by structural changes in Nb and MnO4 with the formation of transition zones at the Nb-Nb2O5 and Nb2O5-MnO2 interfaces as well as a gradual growth in the number of broken bonds in the amorphous dielectric. The second state involves the appearance of crystalline channels consisting of NbO2, NbO, and other oxides whose energy structure differs from that of Nb2O5. This leads to sudden changes in the electronic properties of the MOS system.
- Publication:
-
Ukrainskii Fizicheskii Zhurnal
- Pub Date:
- November 1983
- Bibcode:
- 1983UkFiZ..28.1721B
- Keywords:
-
- Atomic Structure;
- Band Structure Of Solids;
- Metal Oxide Semiconductors;
- Thermal Degradation;
- Amorphous Semiconductors;
- Carrier Density (Solid State);
- Chemical Bonds;
- Conduction Bands;
- Electric Fields;
- Electrical Properties;
- Semiconducting Films;
- Solid-State Physics