The capacitance-voltage characteristics of m-i-n GaN light emitting diodes
Abstract
Experimental results on the C-V characteristics of m-i-n GaN light emitting diodes are presented, and the measured characteristics are shown to be linear in C exp -2 - V coordinates. High cutoff voltages exceeding the diffusion potential and their anomalous variations with temperature are explained by the presence of p-i-n type inclusions in the diode structures.
- Publication:
-
Akademiia Nauk Gruzii Soobshcheniia
- Pub Date:
- February 1983
- Bibcode:
- 1983SoGru.109..269Z
- Keywords:
-
- Capacitance;
- Capacitance-Voltage Characteristics;
- Electric Potential;
- Gallium Nitrides;
- Light Emitting Diodes;
- N-Type Semiconductors;
- Electrical Properties;
- Inclusions;
- Mis (Semiconductors);
- P-I-N Junctions;
- Space Charge;
- Temperature Dependence;
- Electronics and Electrical Engineering