A radiation-hardened VLSI technology
Abstract
A 2(SIGMA) m technology for producing LSI and VLSI parts hardened to megarad radiation levels was developed and implemented on a single event upset free 16 K static CMOS RAM. Key process features and technology tradeoffs are discussed.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- May 1983
- Bibcode:
- 1983STIN...8336381D
- Keywords:
-
- Cmos;
- Radiation Hardening;
- Random Access Memory;
- Very Large Scale Integration;
- Epitaxy;
- Etching;
- Radiation Dosage;
- Tradeoffs;
- Electronics and Electrical Engineering