Review of the physics and response models for burnout of semiconductor devices
Abstract
The various physical mechanisms of failure of semiconductor devices due to electrical overstress and electromagnetic pulses are described. The causes and effects of second breakdown phenomena in p-n junction devices are outlined. The currently used response models which simulate a semiconductor's response to high voltage transients in a circuit or system is discussed.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- February 1983
- Bibcode:
- 1983STIN...8335213Y
- Keywords:
-
- Electromagnetic Pulses;
- Failure;
- Overvoltage;
- Semiconductor Devices;
- Electromagnetic Radiation;
- Mathematical Models;
- Communications and Radar