A new measurement method of the noise parameters of two-port devices
Abstract
Available noise power is detected at device output with a sliding short circuit connected to its input terminals to determine the four noise parameters. Conventional methods suffer from inaccuracies due to the quality of the turners employed. In the method described a relationship is found between the device input impedance and the optimum source impedance for minimum noise figure. The experimental setup and measuring results in the 8 to 11 GHz band are described.
- Publication:
-
NASA STI/Recon Technical Report N
- Pub Date:
- 1983
- Bibcode:
- 1983STIN...8334299F
- Keywords:
-
- Electromagnetic Noise;
- Field Effect Transistors;
- Noise Measurement;
- Superhigh Frequencies;
- Accuracy;
- Electrical Impedance;
- Gallium Arsenides;
- Optimization;
- Tuning;
- Instrumentation and Photography