Generalized theory of conduction in schottky barriers
Abstract
An approximate analytical expression is obtained for the non-equilibrium carrier density throughout the depletion region of a Schottky diode. This expression is used to obtain a generalized expression for the J-V characteristics of the diode. It is shown that for the case of the mean free path less than a fraction of the Debye length the current approaches the Schottky diffusion-limited result. On the other hand for the mean free path greater than this amount the current approaches Bethe's thermionic result. Furthermore, knowing the non-equilibrium carrier density permits the calculation of the transit time of the carriers through the depletion region.
- Publication:
-
Solid State Electronics
- Pub Date:
- July 1983
- DOI:
- 10.1016/0038-1101(83)90029-1
- Bibcode:
- 1983SSEle..26..705S
- Keywords:
-
- Carrier Density (Solid State);
- Schottky Diodes;
- Capacitance;
- P-N Junctions;
- Thermionic Emission;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering