Generalized theory of conduction in schottky barriers
Abstract
An approximate analytical expression is obtained for the nonequilibrium carrier density throughout the depletion region of a Schottky diode. This expression is used to obtain a generalized expression for the JV characteristics of the diode. It is shown that for the case of the mean free path less than a fraction of the Debye length the current approaches the Schottky diffusionlimited result. On the other hand for the mean free path greater than this amount the current approaches Bethe's thermionic result. Furthermore, knowing the nonequilibrium carrier density permits the calculation of the transit time of the carriers through the depletion region.
 Publication:

Solid State Electronics
 Pub Date:
 July 1983
 DOI:
 10.1016/00381101(83)900291
 Bibcode:
 1983SSEle..26..705S
 Keywords:

 Carrier Density (Solid State);
 Schottky Diodes;
 Capacitance;
 PN Junctions;
 Thermionic Emission;
 VoltAmpere Characteristics;
 Electronics and Electrical Engineering