Miniaturization of monolithic amplifiers on GaAs at 10 GHz
Abstract
The results of research to reduce the surface areas of monolithic GaAs semiconductor devices in order to reduce costs are presented, with emphasis on an amplifier. The active element is an FET which serves as a base to the circuitry. In a 10 GHz amplifier constructed, the active layer had a 0.35 micron thickness and a concentration of 10 to the 17th atoms/cu cm. It was manufactured with vapor phase epitaxy. Localized elements make up the passive elements, which can be a source of parasitic losses due to the presence of coplanar masses and masses situated on the rear face of the GaAs substrate. Microstrip lines, rectangular spiral type inductance, and MIM localized capacitors were built as passive elements for the amplifier to minimize the parasitic qualities. A second amplifier was constructed after the first to give 2-10 GHz response with less surface area. The 1.5 sq mm area of the first amplifier was reduced to 0.16 sq mm in the second.
- Publication:
-
Revue Technique Thomson CSF
- Pub Date:
- March 1983
- Bibcode:
- 1983RvT....15..183R
- Keywords:
-
- Gallium Arsenides;
- Integrated Circuits;
- Microwave Amplifiers;
- Microwave Circuits;
- Miniaturization;
- Semiconductor Devices;
- Circuit Diagrams;
- Field Effect Transistors;
- Microstrip Transmission Lines;
- Mim (Semiconductors);
- Electronics and Electrical Engineering