Intermodulation distortions in receiving and transmitting microwave semiconductor devices (Review)
Abstract
Physical mechanisms responsible for the appearance of intermodulation distortions are examined, and methods for the analysis of such distortions are considered. An analysis is made of the levels of intermodulation components in small-signal transistor amplifiers and mixers of receiving devices, as well as in bipolar, FET, Gunn-diode, and IMPATT-diode transmitting devices. Methods for the reduction of intermodulation distortions are described.
- Publication:
-
Radioehlektronika
- Pub Date:
- October 1983
- Bibcode:
- 1983Radel..26...28K
- Keywords:
-
- Intermodulation;
- Microwave Equipment;
- Semiconductor Devices;
- Transmitter Receivers;
- Bipolar Transistors;
- Field Effect Transistors;
- Gunn Diodes;
- Signal Distortion;
- Transistor Amplifiers;
- Electronics and Electrical Engineering