An MIS modulator for the microwave band based on InSb films

The principal parameters of a microwave MIS modulator based on a single-crystal InSb film are evaluated by analyzing the interaction between electromagnetic waves and space charge carriers in the surface layer. It is shown that as the frequency of the incident radiation increases, both initial and total absorption losses decrease. With an increase in the intrinsic carrier concentration of the semiconductor, a modulation depth of up to 0.9 can be obtained with practically acceptable applied potentials.