Effect of Quantum Voltage Fluctuations on the Resistance of Normal Junctions
Abstract
It is shown here that quantum voltage fluctuations (due to finite capacitance energy) cause the resistance of a normal-normal junction to vary with temperature and frequency. These variations are characterized by an activation energy related to the transfer of an electron, and should be observable in junctions with low capacitance, C~10-13 F. An expression for the resistance is derived with use of the recent model of Ambegaokar, Eckern, and Schön.
- Publication:
-
Physical Review Letters
- Pub Date:
- November 1983
- DOI:
- 10.1103/PhysRevLett.51.2060
- Bibcode:
- 1983PhRvL..51.2060H
- Keywords:
-
- Electric Potential;
- Electrical Resistance;
- Josephson Junctions;
- Quantum Electronics;
- Capacitance;
- Charge Transfer;
- Temperature Dependence;
- Solid-State Physics;
- 73.40.Gk;
- 05.40.+j;
- 73.40.Rw;
- Tunneling;
- Metal-insulator-metal structures