Electrical instability in locally grown polycrystalline silicon films
Abstract
A study has been made of a bistable switching effect observed in films of polycrystalline silicon grown epitaxially from a single-crystal film on a locally oxidized silicon substrate. The thickness of the n-type films studied was 5 microns, and the resistivity measured in the single-crystal regions was in the range 0.2-0.5 ohm cm. The reversible nature of the bistable switching, the dependence on the voltage polarity, and the short times required for a transition from one state to the other indicate a purely electronic switching mechanism. The results obtained are explained by using a model for the conductivity of a polycrystalline semiconductor wherein the conductivity is determined by the capture of carriers at grain boundaries.
- Publication:
-
Pisma v Zhurnal Tekhnischeskoi Fiziki
- Pub Date:
- December 1983
- Bibcode:
- 1983PZhTF...9.1523G
- Keywords:
-
- Bistable Circuits;
- Epitaxy;
- Polycrystals;
- Silicon Films;
- Dynamic Stability;
- Electrical Resistivity;
- Film Thickness;
- Grain Boundaries;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering