A new approach for mm-wave generation
Abstract
Procedures for mm-wave generation are currently mainly based on an employment of two-terminal devices, such as IMPATT and Gunn diodes. However, a GaAs FET is a three-terminal device which has several advantages over alternative technologies. These advantages are related to the isolation of input and output, a better drain efficiency, compatibility with microstrip circuits, a low operating temperature, and a reliability which is greater than that of IMPATTs. The present investigation is concerned with the results obtained with medium power 10 to 20 GHz and 20 to 40 GHz frequency doublers. The results show the great potential of GaAs FETs for the considered application.
- Publication:
-
Microwave Journal
- Pub Date:
- September 1983
- Bibcode:
- 1983MiJo...26..147D
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Harmonic Generations;
- Microwave Oscillators;
- Millimeter Waves;
- Avalanche Diodes;
- Circuit Reliability;
- Energy Conversion Efficiency;
- Equivalent Circuits;
- Frequency Multipliers;
- Gunn Diodes;
- Microstrip Devices;
- Operating Temperature;
- Electronics and Electrical Engineering