Monolithic circuits for millimeter-wave systems
Abstract
Monolithic IC millimeter wave components under development at Lincoln Laboratories are described, together with the required technology. A current fundamental construction problem for two-terminal devices such as varactors, IMPATT, Gunn, and mixer diodes is integration of different devices on the same chip. A focus has been integrating Schottky diodes and FETs for monolithic heterodyne receivers that are applicable over the entire millimeter-wave frequency range. A varactor diode frequency multiplier approach has been chosen for the transmitter section and features an epitaxial layer and fabrication techniques similar to those for Schottky diodes in a balanced mixer. Interconnection techniques such as first level metallization and air bridges for second level metallization, a tantalum peroxide process for fabricating monolithic capacitors, and electron beam lithography for exposing submicrometer features combine the diodes and FETs. The three critical technologies identified are epitaxial crystal growth, chip device lithography, and interfacing the chip with the exterior.
- Publication:
-
Microwave Journal
- Pub Date:
- February 1983
- Bibcode:
- 1983MiJo...26...28C
- Keywords:
-
- Integrated Circuits;
- Microwave Circuits;
- Microwave Equipment;
- Millimeter Waves;
- Mixing Circuits;
- Semiconductor Diodes;
- Epitaxy;
- Fabrication;
- Field Effect Transistors;
- Gallium Arsenides;
- Schottky Diodes;
- Varactor Diodes;
- Electronics and Electrical Engineering