Plasma chemical and ion chemical etching of microstructures
Abstract
The possibilities, limitations, and applications of vacuum plasma etching processes for the transfer of images from masks to semiconductors are examined. Attention is given to the mechanisms of reactive sputter etching, reactive ion-beam etching, and etching by reactive gas species; equipment used for the implementation of the above processes; and prospects for using these processes in LSI and VLSI production. Practical recommendations are given regarding the computation of ion chemical and plasma chemical process variables.
- Publication:
-
Moscow Izdatel Radio Sviaz
- Pub Date:
- 1983
- Bibcode:
- 1983MIzRS....R....K
- Keywords:
-
- Microelectronics;
- Plasma Chemistry;
- Plasma Etching;
- Ion Beams;
- Ionic Reactions;
- Masking;
- Reaction Kinetics;
- Semiconductor Devices;
- Sputtering;
- Vacuum Apparatus;
- Very Large Scale Integration;
- Electronics and Electrical Engineering