Boundary conditions at grain boundaries
Abstract
Grain boundaries in polycrystalline semiconductor material are frequently idealized as surfaces possessing a characteristic surface recombination velocity. Minority carrier densities generated by external sources (electron beams, light, etc.) in polycrystalline p-n junctions must satisfy certain boundary conditions at these grain boundaries which will be derived. It will also be shown that a ``folding technique'' introduced recently to deal with this problem is of limited value.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- July 1983
- DOI:
- 10.1063/1.332517
- Bibcode:
- 1983JAP....54.4209V
- Keywords:
-
- Boundary Conditions;
- Boundary Value Problems;
- Grain Boundaries;
- Semiconductors (Materials);
- Carrier Density (Solid State);
- P-N Junctions;
- Polycrystals;
- Recombination Coefficient;
- Solid-State Physics