The growth and structural characteristics of silicon single-crystal ribbons
Abstract
A study has been made of the effect of growth conditions on the structure of silicon single-crystal ribbons. Ribbons up to 40 cm long, 0.5-1 mm thick, and 25 mm wide, including dislocation-free ribbons, were grown by Stepanov's method at a rate of 0.5-1 cm/min. In contrast to twin ribbons, the single-crystal ribbons exhibit a certain degree of faceting; they have pseudo-edges and pseudo-faces characterized by increased electrical activity, as well as electrically uniform wide areas in the 111 planes. Full faceting of the side surface is achieved in dislocation-free single-crystal ribbons. The principal type of defect in the single-crystal ribbons is layered impurity inhomogeneities whose electrical activity depends on the type of impurity.
- Publication:
-
Akademiia Nauk SSSR Izvestiia Seriia Fizicheskaia
- Pub Date:
- February 1983
- Bibcode:
- 1983IzSSR..47..361B
- Keywords:
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- Crystal Growth;
- Silicon;
- Single Crystals;
- Crystal Defects;
- Microstructure;
- Morphology;
- Ribbons;
- Solid-State Physics