Hardness assurance statistical methodology for semiconductor devices
Abstract
A statistical method is developed for determining electrical end-point limits for semiconductor devices subjected to radiation stress. The approach utilizes multiple lot radiation data and can be applied where lot-to-lot variations in radiation response are large compared to variations within a lot. Such limits may be used as design parameter limits or as failure limits for lot acceptance testing of future hardness-assured, semiconductor production lots. The method was applied for neutron and total gamma dose effects on low power bipolar transistors, digital TTL ICs, and a power transistor for which an adequate multiple-lot radiation database existed.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1983
- DOI:
- 10.1109/TNS.1983.4333131
- Bibcode:
- 1983ITNS...30.4322A
- Keywords:
-
- Component Reliability;
- Quality Control;
- Radiation Hardening;
- Radiation Tolerance;
- Semiconductor Devices;
- Statistical Analysis;
- Bipolar Transistors;
- Data Bases;
- Gamma Rays;
- Neutron Irradiation;
- Radiation Dosage;
- Ttl Integrated Circuits;
- Electronics and Electrical Engineering