Flash X-ray testing of ER3400 EAROMS
Abstract
Flash X-ray testing of ER3400 MNOS memories demonstrates their memory volatility. Flash X-ray test data is presented for four bias conditions and two write pulse widths. A simple electrical screening technique is described which increases the memory vulnerability threshold. Permanent shifts in access time and memory reference voltage from accumulated doses are discussed.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1983
- DOI:
- Bibcode:
- 1983ITNS...30.4285A
- Keywords:
-
- Electronic Equipment Tests;
- Radiation Damage;
- Read-Only Memory Devices;
- X Ray Analysis;
- Access Time;
- Electric Potential;
- Failure Modes;
- Thresholds;
- Transistors;
- Electronics and Electrical Engineering