Total dose radiation effects on silicon MESFET circuits
Abstract
Silicon MESFET technology is an attractive candidate for a gamma dose hard FET technology suitable for digital logic and sRAM circuits. This paper describes the results of an evaluation of the total dose hardness of Si MESFET circuits of sufficient density, performance, and complexity to allow prediction of the performance of Si MESFET LSI circuits. A simple approach to harden the isolation is demonstrated. Gamma total dose tests show the technology to be radiation hard to at least 10 to the 6th rad (Si) without any observed degradation.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1983
- DOI:
- 10.1109/TNS.1983.4333122
- Bibcode:
- 1983ITNS...30.4277D
- Keywords:
-
- Field Effect Transistors;
- Radiation Hardening;
- Schottky Diodes;
- Silicon Transistors;
- Transistor Circuits;
- Circuit Reliability;
- Gamma Rays;
- Isolators;
- Large Scale Integration;
- Logic Circuits;
- Radiation Dosage;
- Radiation Effects;
- Random Access Memory;
- Electronics and Electrical Engineering