Channel and substrate currents in GaAs FETs due to ionizing radiation
Abstract
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1983
- DOI:
- 10.1109/TNS.1983.4333099
- Bibcode:
- 1983ITNS...30.4151Z
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Ionizing Radiation;
- Jfet;
- Radiation Effects;
- Volt-Ampere Characteristics;
- Electrical Measurement;
- Integrated Circuits;
- Ion Implantation;
- Photoelectric Emission;
- Substrates;
- Transient Response;
- Electronics and Electrical Engineering