Profile studies of ion-implanted MESFET's
Abstract
A study of ion-implanted MESFET performance as a function of the implantation energy and fluency, and including the effects of deep-level trapping-state concentrations in the substrate, has been conducted. Carrier concentrations as a function of depth are determined through the use of LSS theory and a profiling model. An analytic device model, which computes both dc and RF characteristics, is then employed to predict MESFET performances. The study includes the effects of depth-dependent transport properties and has indicated a number of design rules for the fabrication of optimized ion-implanted devices.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- December 1983
- DOI:
- 10.1109/TMTT.1983.1131663
- Bibcode:
- 1983ITMTT..31.1066G
- Keywords:
-
- Carrier Density (Solid State);
- Field Effect Transistors;
- Ion Implantation;
- Performance Prediction;
- Schottky Diodes;
- Volt-Ampere Characteristics;
- Carrier Transport (Solid State);
- Density Distribution;
- Equivalent Circuits;
- Fabrication;
- Network Analysis;
- Electronics and Electrical Engineering