On theory and performance of solid-state microwave distributed amplifiers
Abstract
The principle of the distributed amplifier was first proposed by Percival (1935). The new concept was based on the idea to separate the interelectrode capacitances of the active components by means of artificial transmission lines, while adding their transconductances. As a result, it was possible to obtain amplification over much wider bandwidths than was achievable with conventional amplifier systems. In connection with more severe risetime requirements and the need for larger gain-bandwidth products, the distributed amplifier concept has now been successfully applied to monolithic GaAs MESFET amplifiers at microwave frequencies. The present investigation has the objective to contribute to the theoretical analysis and the practical design of GaAs MESFET distributed amplifiers. In a theoretical study, use is made of a simple transistor model employed in an amplifier with either artificial or real transmission lines. The study is subsequently extended to a more sophisticated model of a transistor developed from its measured S-parameters.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- June 1983
- DOI:
- 10.1109/TMTT.1983.1131524
- Bibcode:
- 1983ITMTT..31..447N
- Keywords:
-
- Amplifier Design;
- Distributed Amplifiers;
- Field Effect Transistors;
- Microwave Amplifiers;
- Solid State Devices;
- Circuit Diagrams;
- Electrical Impedance;
- Gallium Arsenides;
- Performance Prediction;
- Transmission Lines;
- Electronics and Electrical Engineering