Large signal design of GaAs FET oscillators using input dielectric resonators

Using a simple method by which power output prevision is also reached, a large signal design is presented for an FET or microwave transistor device input, in front of which a dielectric resonator is placed to yield a stable frequency source. Practical results are obtained for the case of an X-band medium power oscillator. The advantage of this configuration over the output filter one is that 3 dB more output power can typically be obtained.