Large signal design of GaAs FET oscillators using input dielectric resonators
Abstract
Using a simple method by which power output prevision is also reached, a large signal design is presented for an FET or microwave transistor device input, in front of which a dielectric resonator is placed to yield a stable frequency source. Practical results are obtained for the case of an X-band medium power oscillator. The advantage of this configuration over the output filter one is that 3 dB more output power can typically be obtained.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- April 1983
- DOI:
- Bibcode:
- 1983ITMTT..31..358P
- Keywords:
-
- Dielectrics;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Oscillators;
- Resonators;
- Signal Analysis;
- Microstrip Transmission Lines;
- Power Efficiency;
- Electronics and Electrical Engineering