Temperature stabilization of GaAs MESFET oscillators using dielectric resonators
Abstract
A simple model of the temperature stabilization of dielectric resonator FET oscillators (DRO's) is presented. Deduced from the oscillation condition, the model furnishes relations for oscillation power and frequency stability with temperature. A stack resonator with an appropriate linear resonance frequency/temperature chracteristic has been developed and used to stabilize a DRO: frequency stability of + or - 120 kHz over -20 C to 80 C at 11.5 GHz has been achieved.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- March 1983
- DOI:
- Bibcode:
- 1983ITMTT..31..312T
- Keywords:
-
- Field Effect Transistors;
- Frequency Stability;
- Gallium Arsenides;
- Microwave Oscillators;
- Schottky Diodes;
- Thermal Stability;
- Dielectrics;
- Frequency Shift;
- Phase Shift;
- Power Conditioning;
- Superhigh Frequencies;
- Temperature Dependence;
- Electronics and Electrical Engineering