The operation of power MOSFET in reverse mode
Abstract
The I-V characteristics of power MOS transistors in the reverse mode are considered by extending the theory for device operation in the normal mode. An identification is made of three regions of operation in the reverse mode. The calculated I-V curves are found to compare favorably with the measured curves of a commercial power MOSFET. It is concluded that the MOSFET in the reverse mode is a majority-carrier device until the intrinsic body-to-drain p-n junction begins to conduct. Its on-state resistance is slightly less than the device on-state resistance in the normal mode. It is pointed out that power MOSFETs are able to function as fast recovery rectifiers with a low forward drop.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- December 1983
- DOI:
- 10.1109/t-ed.1983.21452
- Bibcode:
- 1983ITED...30.1825C
- Keywords:
-
- Field Effect Transistors;
- Metal Oxide Semiconductors;
- Power Supply Circuits;
- Volt-Ampere Characteristics;
- Semiconductor Junctions;
- Work Functions;
- Electronics and Electrical Engineering