Performance comparison of highly integrated circuits - Silicon NMOS versus gallium arsenide normally-off MESFET technology
Abstract
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- December 1983
- DOI:
- Bibcode:
- 1983ITED...30.1640G
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Integrated Circuits;
- Metal Oxide Semiconductors;
- Silicon;
- Technology Assessment;
- Background Noise;
- Energy Dissipation;
- Energy Requirements;
- Equivalent Circuits;
- Packing Density;
- Parameterization;
- Schottky Diodes;
- Time Lag;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering