InGaAsP/InP phototransistor-based detectors
Abstract
Two kinds of phototransistors-a Schottky Collector Phototransitor (SCPT) and a Photo-Darlington Transistor (PDT), which should prove useful for switching and high current application, respectively-have been fabricated from InGaAsP/InP wafers grown by LPE. The SCPT exhibited gain greater than 100. The characteristics of the SCPT are compared with those of n-p-n phototransitors and are found to differ considerably. A PDT with a gain of 100 has been fabricated, and collector currents over 100 mA can be maintained without paying special attention to the heat sink. The details of the fabrication procedures and characteristics of these devices are described in this paper.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- April 1983
- DOI:
- 10.1109/T-ED.1983.21136
- Bibcode:
- 1983ITED...30..404S
- Keywords:
-
- Fabrication;
- Heterojunction Devices;
- Indium Phosphides;
- Phototransistors;
- Radiation Detectors;
- Volt-Ampere Characteristics;
- Avalanche Diodes;
- Energy Bands;
- Gallium Arsenides;
- High Current;
- N-P-N Junctions;
- Off-On Control;
- Schottky Diodes;
- Switching Circuits;
- Electronics and Electrical Engineering