Latchup-free Schottky-barrier CMOS
Abstract
A common failure mechanism in bulk CMOS integrated circuits is due to the latchup of the parasitic SCR structure. Using Schottky-barrier junctions for the source and drain of the p-channel transistors eliminates the p-n-p-n structure. A technology utilizing platinum-silicide p-channel source and drain and ion-implanted n-channel source and drain was realized demonstrating latchup resistance without many sacrifices inherent with other methods. Anomalies in the p-MOSFET characteristics are reported and discussed.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- February 1983
- DOI:
- Bibcode:
- 1983ITED...30..110S
- Keywords:
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- Circuit Reliability;
- Cmos;
- Latch-Up;
- Schottky Diodes;
- Very Large Scale Integration;
- Energy Dissipation;
- Failure Modes;
- Field Effect Transistors;
- Ion Implantation;
- N-Type Semiconductors;
- Platinum Compounds;
- Silicides;
- Electronics and Electrical Engineering