Unified analysis of the bulk unipolar diode

A unified analysis for the different forms of the homojunction implementation of the bulk unipolar diode is presented which includes as special cases the planar doped barrier, the Camel diode, and the p-plane barrier. Closed-form expressions for the barrier-height variation with the applied voltage are obtained. The structure of the general homojunction bulk majority-carrier diode is shown, along with the doping profile and energy-band diagram. Relevant parameters for the three studied majority-carrier diodes are presented, as are the diodes' calculated bias I-V characteristics at forward and reverse bias and their calculated voltage dependence of the depletion capacitance.