Modulation detuning characteristics of actively mode-locked diode lasers
Abstract
A frequency domain model for actively mode-locked diode lasers is developed. The model accounts for the effects of chip facet reflectivity and allows the shape of the gain waveform to be perturbed by gain saturation due to the mode-locked pulse train in a self-consistent fashion. Experimental measurements were carried out in the 100 ps region where direct detection by ultrafast photodiodes is possible. The lasers were biased above the external cavity threshold and modulated with a small sinusoidal signal at roughly 1 GHz. The combination of above threshold operation and small signal modulation ensures very small variations during modulation. These experimental results show good agreement with the model, in contrast with the predictions of existing models which ignore the effects of chip facet reflectivity and gain saturation.
- Publication:
-
IEEE Journal of Quantum Electronics
- Pub Date:
- June 1983
- DOI:
- 10.1109/JQE.1983.1071990
- Bibcode:
- 1983IJQE...19.1068G
- Keywords:
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- Diodes;
- Laser Mode Locking;
- Pulse Modulation;
- Pulsed Lasers;
- Laser Outputs;
- Reflectance;
- Lasers and Masers