A proposed high-frequency high-power silicon-silicide multilayered device

It is pointed out that there is a need for new high-frequency, high-power sources for microwave and millimeter-wave system applications. A number of problems arise in connection with a new concept considered by Pan et al. (1982). The present investigation is, therefore, concerned with an approach which makes it possible to avoid these difficulties. The new approach involves the integration of a series of metal-semiconductor diodes. The use of Schottky contacts, rather than p-n junctions, prevents the problem of minority-carrier injection. Attention is given to the principles of integrated devices, and procedures of device realization based on the employment of Si-CoSi2 molecular beam epitaxy (MBE) technology.