Total dose radiation effects on CMOS ring oscillators operating during irradiation
Abstract
Ionizing radiation effects in MOS devices produce shifts in the device characteristics. These shifts depend on the radiation doses and also on the gate oxide bias during irradiation. This bias effect makes it difficult to predict radiation effects on operating MOS LSI's, because bias conditions are generally not constant. It is, however, important to design MOS LSI's which can operate under the conditions found in space or nuclear power plant applications. The present investigation is concerned with total dose radiation effects on propagation delay time in scaled CMOS/SOS ring oscillators, operating during gamma-ray irradiation. Data for experimental and simulated propagation delay time as a function of supply voltage are presented in a graph, taking into account conditions before and after a 100,000 rad (Si) level gamma-radiation exposure.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- December 1983
- DOI:
- 10.1109/EDL.1983.25793
- Bibcode:
- 1983IEDL....4..435H
- Keywords:
-
- Cmos;
- Gamma Rays;
- Oscillators;
- Radiation Effects;
- Sos (Semiconductors);
- Electric Potential;
- Irradiation;
- Propagation Modes;
- Ring Structures;
- Time Lag;
- Electronics and Electrical Engineering