Millimeter-wave GaAs distributed IMPATT diodes
Abstract
Millimeter-wave oscillations were obtained in distributed GaAs IMPATT diodes prepared by molecular beam epitaxy (MBE). Both single-drift-region and double-drift-region structures were used to fabricate various length devices, up to 1.25 mm, to investigate oscillation frequency dependence on device length. Output power levels of 1.5 and 0.5 W were obtained at 22 and 50 GHz, respectively, using 500-ns pulses. The highest frequency of oscillation observed was 89 GHz.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- November 1983
- DOI:
- 10.1109/EDL.1983.25777
- Bibcode:
- 1983IEDL....4..393B
- Keywords:
-
- Avalanche Diodes;
- Distributed Amplifiers;
- Gallium Arsenides;
- Microstrip Transmission Lines;
- Microwave Oscillators;
- Millimeter Waves;
- Frequency Response;
- Impedance Matching;
- Molecular Beam Epitaxy;
- Network Synthesis;
- Power Gain;
- Resonators;
- Electronics and Electrical Engineering