Amorphous-silicon gate GaAs FET's
Abstract
Silicon-germanium-boron ternary amorphous alloy has been applied to GaAs FET as a gate contact material. A good Schottky contact with a barrier height as large as 0.94 V has been realized. Schottky-barrier gate GaAs FET's fabricated using the amorphous film as a gate contact layer exhibit excellent normally off FET characteristics of a large saturated drain current, which has never been attained by conventional GaAs MESFET's.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- October 1983
- DOI:
- 10.1109/EDL.1983.25762
- Bibcode:
- 1983IEDL....4..358S
- Keywords:
-
- Amorphous Semiconductors;
- Amorphous Silicon;
- Field Effect Transistors;
- Gallium Arsenides;
- P-N Junctions;
- Volt-Ampere Characteristics;
- Boron;
- Germanium;
- Integrated Circuits;
- Silicon;
- Work Functions;
- Electronics and Electrical Engineering