Novel real-space hot-electron transfer devices
Abstract
A new class of devices based on hot-electron transfer between two conducting layers is proposed. The essential feature of these devices is a pronounced negative differential resistance (NDR) in the drain circuit, controlled by gate and substrate voltages. This allows a novel type of bistable logic element, which, although being unipolar, is comparable to CMOS inverter in that a significant current is drawn only during switching. Another possible application is a gate-controlled microwave generator and amplifier. In the present work, the above device concepts are analyzed in the instance of GaAs/GaAlAs heterojunction realizations.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- September 1983
- DOI:
- 10.1109/EDL.1983.25753
- Bibcode:
- 1983IEDL....4..334K
- Keywords:
-
- Electron Transfer;
- Energy Bands;
- Hot Electrons;
- Negative Resistance Devices;
- Transferred Electron Devices;
- Volt-Ampere Characteristics;
- Aluminum Gallium Arsenides;
- Bistable Circuits;
- Field Effect Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Microwave Amplifiers;
- Microwave Oscillators;
- Electronics and Electrical Engineering