Ultra-broad-band GaAs monolithic direct-coupled feedback amplifiers
Abstract
GaAs monolithic direct-coupled amplifiers with load resistor and feedback resistor have been developed. The fabricated amplifier using the self-aligned implantation for n(+)-layer technology (SAINT) FETs has a 10-dB gain, a 7.2-dB noise figure, and input VSWR less than 2.0 over the frequency range from dc to 4 GHz.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- September 1983
- DOI:
- Bibcode:
- 1983IEDL....4..323I
- Keywords:
-
- Amplifier Design;
- Broadband Amplifiers;
- Fabrication;
- Feedback Amplifiers;
- Gallium Arsenides;
- Integrated Circuits;
- Chips (Electronics);
- Coupling Circuits;
- High Gain;
- Ion Implantation;
- Low Noise;
- Microwave Amplifiers;
- Self Alignment;
- Electronics and Electrical Engineering