High-speed low-voltage ring oscillators based on selectively doped heterojunction transistors
Abstract
Ring oscillators are reported which attain high speed at low supply voltage, and thus low power. Selectively doped heterojunction transistors were used in a direct-coupled circuit. The GaAs/Al0.3Ga0.7As heterostructure, grown by MBE, was designed to allow self-limiting etch of the gate recesses in the driver transistors. Devices with 1-micron gates operated at supply voltages as low as 0.23 V at T = 300 K. At 77 K, gate delays as low as 14.7 ps were observed at 1.0-V bias.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- September 1983
- DOI:
- 10.1109/EDL.1983.25743
- Bibcode:
- 1983IEDL....4..306F
- Keywords:
-
- Electron Oscillations;
- Field Effect Transistors;
- Gallium Arsenides;
- Heterojunction Devices;
- Logic Circuits;
- Low Voltage;
- Molecular Beam Epitaxy;
- Time Lag;
- Aluminum Gallium Arsenides;
- Coupling Circuits;
- Doped Crystals;
- Electron Gas;
- Fabrication;
- Harmonic Oscillators;
- High Speed;
- Junction Transistors;
- Electronics and Electrical Engineering