Use of Au/Te/Ni films for ohmic contact to GaAs
Abstract
Ohmic contacts to n-type GaAs are usually fabricated by alloying AuGe/Ni films on GaAs. Ge acts as a donor to GaAs for fabrication of the ohmic contact. In an attempt to replace Ge, which is an amphoteric impurity, with a group VI element to improve on the ohmic contact resistivity, experiments were done with AuTe and AuTe/Ni contacts. A very low resistivity of about 5 x 10 to the -7th ohm/sq cm was obtained by alloying 1700 A of AuTe film with 300 A of nickel on top at 510 C. This is the lowest contact resistivity obtained with any material other than AuGe/Ni on n-type GaAs.
- Publication:
-
IEEE Electron Device Letters
- Pub Date:
- September 1983
- DOI:
- 10.1109/EDL.1983.25741
- Bibcode:
- 1983IEDL....4..301G
- Keywords:
-
- Contact Resistance;
- Electric Contacts;
- Gallium Arsenides;
- Gold;
- Metal Films;
- Nickel;
- Tellurium Alloys;
- Alloying;
- Fabrication;
- Metal Surfaces;
- Metallizing;
- Microstructure;
- N-Type Semiconductors;
- Schottky Diodes;
- Temperature Dependence;
- Electronics and Electrical Engineering